Spin backflow and ac voltage generation by spin pumping and the inverse spin Hall effect.
نویسندگان
چکیده
The spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant polarization component parallel to the precession axis and a rotating one normal to the magnetization. The former is now routinely detected as a dc voltage induced by the inverse spin Hall effect (ISHE). Here we compute ac ISHE voltages much larger than the dc signals for various material combinations and discuss optimal conditions to observe the effect. The backflow of spin is shown to be essential to distill parameters from measured ISHE voltages for both dc and ac configurations.
منابع مشابه
Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin-Orbit Coupling of Topological Insulator Bi2Se3.
Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling (SOC) and the existence of spin-textured surface states that might be potentially exploited for "topological spintronics." Here, we use spin pumping and the inverse spin Hall effect to demonstrate successful spin injection at room temperature from a metallic ferromagnet (CoFeB) into the prototypical 3D ...
متن کاملScaling behavior of the spin pumping effect in ferromagnet-platinum bilayers.
We systematically measured the dc voltage V(ISH) induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V(ISH) invariably has the same polarity, and scales with the magnetization precession cone angle. These ...
متن کاملSpin pumping by parametrically excited exchange magnons.
We experimentally show that exchange magnons can be detected by using a combination of spin pumping and the inverse spin-Hall effect proving its wavelength integrating capability down to the submicrometer scale. The magnons were injected in a ferrite yttrium iron garnet film by parametric pumping and the inverse spin-Hall effect voltage was detected in an attached Pt layer. The role of the dens...
متن کاملThickness and power dependence of the spin-pumping effect in Y[subscript 3]Fe[subscript 5]O[subscript 12]Pt heterostructures measured by the inverse spin Hall effect
Citation Jungfleisch, M. B., et al. "Thickness and power dependence of the spin-pumping effect in Y[subscript 3]Fe[subscript 5]O[subscript 12/Pt heterostructures measured by the inverse spin Hall effect. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this ...
متن کاملSPIN-PUMPING-INDUCED SPIN TRANSPORT IN p-TYPE SILICON AT ROOM TEMPERATURE
Spin transport in inorganic semiconductors provides an indispensable building block for realizing the so-called beyond-CMOS technologies. Since the spin-orbit interaction in silicon (Si) is essentially small, Si-based functional devices using the spin degree of freedom is recognized to be promising with respect to spin coherence. Although spin transport at room temperature (RT) in n-Si has been...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 110 21 شماره
صفحات -
تاریخ انتشار 2013